Study of Neutron Transmutation Doping in a-Si:H

Neutron transmutation doping was applied to hydrogenated amorphous Si (a-Si:H) prepared by r.f. glow discharge decomposition of SiH4. Electrical and structural properties of a-Si:H were studied before and after neutron irradiation with neutron dose of N ≤l.8×1017/cm2 as a function of annealing temperature. It is suggested that the transmutation doped P is activated as a donor impurity with high doping efficiency in a-Si:H after thermal annealing near the growth temperature of a-Si:H.