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16.7 Polysilicon Thin Film Transistors on a Novel 800℃ Galss Substrate (Report on 1986 SID International Symposium)
16.7 Polysilicon Thin Film Transistors on a Novel 800℃ Galss Substrate (Report on 1986 SID International Symposium)
1986
John R. Troxell
W. I. Harrington
James C. Erskine
William H. Dumbaugh
Francis P. Fehlner
Roger A. Miller
Keywords:
Optoelectronics
Substrate (chemistry)
Materials science
Thin-film transistor
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