Towards CMOS-compatible photon-counting imagers in the whole 10 nm – 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology

The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm – 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 µm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).