Atomically flat III-antimonide epilayers grown using liquid phase epitaxy

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using liquid phase epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 /spl mu/m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5/spl conint/ /spl larr/ 5 /spl mu/m.