High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high I ON /I OFF (>10 7 ). The I ON current of the ultra-thin body (UTB) JL-TFT is increased by quantum confined effect.