New mesh type silicon photodiode and its performance

1993 
Abstract A large area silicon photodiode (~11 cm 2 ) for the detection of ultraviolet photons has been fabricated by a photo engraving process (PEP). A quantum efficiency of 110% was achieved for the scintillation light (175 nm) in liquid xenon excited by 5.486 MeV α-particles from 241 Am.
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