Photolithographic and plasma etching technique for organic field effect transistor fabrication
2017
Photolithographic and plasma etching techniques were used to fabricate top gate-bottom contacts Organic Field Effect Transistors. The steps of the technology are shown, for transistors with Poly 3-hexylthiophene as organic semiconductor and cross linked Poly Vinyl Alcohol as gate insulator. Devices with low operational voltage, high mobility and high I ON =I OFF ratios with very good reproducibility were fabricated. Also, environmental stability was achieved, preventing transistor degradation from O 2 and humidity.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
1
Citations
NaN
KQI