A 0.5 /spl mu/m technology for advanced microcontroller applications
1994
The paper describes a modular 0.5 /spl mu/m, n+/p+ poly, Ti-salicided, double poly, triple metal technology combining high performance digital logic, precision analog components and non-volatile memory. The non-volatile memory is a simple, split-gate flash EEPROM which consumes little power during program, erase and read operations. Because of the low power/low voltage operation of individual devices, the overall technology is ideally suited for applications in high speed communication, computing and battery powered portable systems. >
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