Growth of high mobility epitaxial thin films of Pb0.8Sn0.2Te by vacuum evaporation

Abstract It has been reported that ‘as grown’ (unannealed) vacuum evaporated thin films of Sn-rich Pb 0.8 Sn 0.2 Te were n -type with low mobility. Annealing of these films in tellurium vapours resulted in a significant increase in mobility. The mobilities of the films annealed in tellurium vapours for 40 min were about ≅9 × 10 3 cm 2 /V.sec.