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Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate II
Study of forward-current crowded region in p-n junction diodes on free-standing GaN substrate II
2016
Kentarou Hayashi
Hiroshi Ohta
Fumimasa Horikiri
Yoshinobu Narita
Takehiro Yoshida
Tohru Nakamura
Tomoyoshi Mishima
Keywords:
Substrate (chemistry)
Gallium nitride
p–n junction
Electrical junction
Optoelectronics
Diode
Materials science
forward current
Correction
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