Потрійні системи Lu-V-{Ge, Sn}

The isothermal sections of the phase diagrams of the Lu–V–Ge and Lu-V-Sn ternary systems were constructed at 870 K over the whole concentration range using X-ray diffraction and EPM analyses. In the Lu-V-Ge system a formation of the substitutional solid solution Lu 5 Ge 3- x V x based on the Lu 5 Ge 3 binary compound (Mn 5 Si 3 structure type) was found up to 6 at. % V. Insertion of the V atoms in the structure of the LuGe 2 binary germanide (ZrSi 2 structure type, up to 5 aт. % V) results in the formation of the LuV 0,15 Ge 2 ternary phase (CeNiSi 2 structure type, space group Cmcm , a =0.40210(4), b =1.5661(1), c =0.38876(3) nm), which corresponds to the limit composition of the interstitial solid solution LuV x Ge 2 . The interaction between the elements in the Lu-V-Sn system results in the formation of one ternary compound LuV 6 Sn 6 (SmMn 6 Sn 6 -type, space group P 6/ mmm , a =0.5503(2), c =0.9171(4) nm) at investigated temperature.