Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs

In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes（SBDs）are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities,static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H–SiC theoretical limit line. The best achieved breakdown voltages（BVs） of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances(Ron-sp) are 2.1 m?·cm2,7.34m?·cm2, and 30.3 m?·cm2, respectively.