Schottky device metal structure capable of improving temperature circulating capacity and manufacturing process

The invention discloses a schottky device metal structure capable of improving temperature circulating capacity and a manufacturing process. The metal structure is that the front metal layer includes five layers, namely, a silver film layer, a nickel film layer, a second titanium film layer, an aluminum film layer and a first titanium film layer; the vacuum degree is controlled to be less than 2E-6 torrs through an evaporator table, and a roasting chamber at high temperature of 170+/-20 DEG C is used for processing for 3 minutes, and then the evaporating process can be carried out; the first titanium film layer, the aluminum film layer, the second titanium film layer, the nickel film layer and the silver film layer can be respectively evaporated at the speeds of 20A, 40A, 20A,10A and 30A per second; the vacuum degree of the chamber is maintained to be less than 2E-6 torrs for 10 minutes after evaporating; the nitrogen is charged until reaching the atmosphere pressure, and then the chamber is opened, so as to finish the front metal evaporating process. According to the meal structure, the stress matching degree of different metal film layers can be overcome while good ohm connection is achieved, and thus the temperature circulating resistance of the chip can be obviously improved.