High speed CMOS active pixel sensors for particle imaging

CMOS active sensors technology has been proved to be one of the potential candidates for charged particle imaging in future high-energy experiments. Two prototypes of CMOS active pixel sensors aimed at high speed pixel detector with on-chip data sparcification are presented in this work. While having the same architecture, the two chips were developed with different CMOS processes in order to evaluate the influence of epitaxial layer thickness on charge detection performance. Thanks to the offset auto-compensation on both pixel and column level, the noise is well controlled for both two chips. Binary outputs are realized by column level auto-zeroed discriminators. Using a 55 Fe radioactive source, the charge detection capability is obtained and the factors which influence charged particles detection efficiency is discussed.