A 23 ps/2.1 mW ECL gate

Simulated output waveforms at 0.1, 0.3 and, 0.6-pF loading of a design optimized for a 0.3-pF nominal load are shown. An AC-coupled APD ECL (active-pull-down emitter-coupled-logic) gate with significantly improved gate delay in the low-power (1-2 mW) regime is described. Unloaded gate delays of 23 and 35 ps at 2.1 and 1.1-mW/gate power, respectively, were demonstrated in a bipolar technology using a double-poly, self-aligned process with emitter width of 0.8 mu m (mask). The device cross-section is presented along with an SEM (scanning electron microscopy) micrograph of the basic gate used in the ring oscillator. >