Carrier control in 2D transition metal dichalcogenides with Al 2 O 3 dielectric

We report transport measurements of dual gated MoS2 and WSe2 devices using atomic layer deposition grown Al2O3 as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.