Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

A GaSb/GaAs quantum-dot light-emitting diode (QD LED) with a single GaSb QD layer is investigated in this paper. The room-temperature photoluminescence peak blue shift with increasing excitation power densities suggests a type-II alignment of the GaSb/GaAs hetero-structures. Significant electroluminescence is observed for the device under forward biases, which suggests that pronounced dipole transitions occur at the GaSb/GaAs interfaces. With increasing forward biases, the observed EL peak blue shift confirms that the origin of luminescence is from the type-II GaSb/GaAs QD structures.