Semiconducting Y-Ba-Cu-O Thin Film Detectors at Room Temperature: Front End and Back End Design Issues from Near to Far Infrared

Semiconducting Y-Ba-Cu-O based devices for room temperature infrared detection are investigated. The coupling conditions of incident radiation to the sensing film are examined first, with relation to the Y-Ba-Cu-O absorption coefficient in the THz frequency range. The coupling conditions of the sensing film to the readout circuitry are then examined, with relation to the Schottky nature of the metal/Y-Ba-Cu-O contacts. We conclude with some device performances. In the near-infrared for instance, noise equivalent power values below 10 pW/Hz1/2, as well as detectivity values above 109cm·Hz1/2/W, could be measured.