Observation of Cu2ZnSnS4 thin film prepared by RF magnetron sputtering for heterojunction applications

In this paper, copper-zinc-tin-sulfide (Cu2ZnSnS4) thin film was successfully fabricated by radio-frequency (RF) magnetron sputtering on glass substrate. The structural, optical and electrical properties of the film were studied by X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectrometer, field emission scanning electron microscope (FESEM), UV-VIS spectrophotometer and Hall effect measurement, respectively. The results show that Cu2ZnSnS4 film is of good quality. A good nonlinear rectifying behavior is obtained for the GZO/Cu2ZnSnS4 heterojunction. Under reverse bias, high photocurrent is obtained.