MOVPE growth of Si-doped GaAs and AlxGa1−xAs using tertiarybutylarsine (TBA) in pure N2 ambient

Abstract The effects of Si-doping on the growth of GaAs and Al x Ga 1− x As alloy in MOVPE system using tertiarybutylarsine (TBA) in a pure N 2 ambient have been studied. For Si-doped GaAs, the electron carrier concentration increases to a maximum of 3.4×10 18  cm −3 with the increase of SiH 4 flow rate, and then decreases with any further increase of SiH 4 flow rate. For Al x Ga 1− x As with Al concentration x =0.52 the electron carrier concentration reached to a maximum of 3.3×10 17  cm −3 . The Al x Ga 1− x As alloy grown in a nitrogen ambient has a lower Al concentration than the one that grown normally in an H 2 ambient. It has also been found that the Al content of the alloy decreases with an increase of silane concentration for a constant group V/III ratio during the MOVPE growth.