Long wavelength infrared negative luminescent devices with strong Auger suppression

We have investigated the negative luminescent properties of HgCdTe photodiodes having peak emission at a wavelength of 7.6 μm, as a function of temperature and applied bias. Under reverse bias at room temperature, intrinsic Auger processes are almost fully suppressed. The internal negative luminescence efficiency of ≈85% is nearly independent of temperature in the 240–300 K range, and at 296 K corresponds to an apparent temperature reduction of 43 K. The small currents needed to drive these diodes (as little as 0.7 A/cm2 at 296 K), together with their long-wavelength luminescence, make them suitable for a range of device applications.