Low Temperature Deposition of TiN Using Tetrakis(dimethylamido)‐Titanium in an Electron Cyclotron Resonance Plasma Process

High quality TiN layers were deposited in an electron cyclotron resonance (ECR) plasma process at substrate temperatures between 100 and 600 o C. Tetrakis(dimethylamido)-titanium [Ti(NMe 2 ) 4 ] was used as the precursor and introduced into the downstream region of an ECR plasma. Nitrogen or ammonia have been used as plasma gases. The electrical properties and the film compositions of the gold-colored TiN layers mainly depend on the deposition rate. ECR plasma-activated nitrogen or ammonia reacts with Ti(NMe 2 ) 4 to form low resistivity (100-150 μΩcm) crystalline TiN films even at a substrate temperature of 100 o C. Films deposited between 200 and 600 o C exhibited resistivities that decreased from 100 to 45 μΩcm