Comparative mid- and far-infrared spectroscopy of nitrogen–oxygen complexes in silicon

Abstract A comparative infrared absorption study between electronic and vibrational states of nitrogen–oxygen related shallow donors has been performed in nitrogen-doped Czochralski silicon. Quasi-thermodynamic equilibrium conditions have been established by long-term annealing between 600 and 1000 °C. Different members of the N–O shallow donor family show a specific thermal decay in this temperature range, in disagreement with present theoretical modeling. Based on this characteristic behavior, we find two local vibrational modes at 1070 and 860 cm −1 which can be assigned to the most prominent shallow-donor species with the chemical composition NO 2 . The implication on the microscopic structure of this complex is discussed.