Magnetic and magnetotransport properties of (AlGaN∕GaN):Mg∕(GaMnN) heterostructures at room temperature
2007
Dilute magnetic semiconductor films (GaMnN) are highly resistive, making transport measurements difficult to achieve. However, when GaMnN films are sandwiched between p-type doped (AlGaN∕GaN) strained-layer superlattices, holes from the superlattice interact with the Mn3+∕2+ ions and transport measurements were realized. The authors have found also that the ferromagnetic properties of GaMnN critically depend on the level of p-type doping in the superlattice. They report anomalous Hall effect measurements in this (AlGaN∕GaN):Mg∕(GaMnN) multilayered structure. The current results also demonstrate the role of carriers, especially holes, in mediating the ferromagnetic properties of GaMnN dilute magnetic semiconductor films.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
15
References
14
Citations
NaN
KQI