Surface characterization of high-dose Sb+ implanted rapid thermal annealed monocrystalline silicon

Abstract Implantation-induced damage during high dose Sb + ion implantation in (100) p-Si has been examined by surface-sensitive angle-resolved X-ray photoelectron spectroscopy. Surface regions of silicon implanted with 2 × 10 14 , 1.2 × 10 15 , 5.4 × 10 15 and 1.4 × 10 16 Sb + cm −2 and subsequently rapidly annealed at 1100°C for 10 s were studied by analyzing the Si 2p, O 1s, and Sb 3d 5 2 photoelectron spectra at 25°, 65° and 90° to the surface plane. In particular, the Si 2p peaks revealed two lines corresponding to the elemental and oxidized states in all the samples. The binding energy shift between these two lines was about 1 eV less for the 2 × 10 14 Sb + cm −2 sample than for the others and the Si:SiO x ratio decreased systematically with increasing ion dose. The oxygen concentration increased by nearly one order-of-magnitude between the 1.2 × 10 15 and 1.4 × 10 16 Sb + cm −2 implanted samples. These results are interpreted in terms of the formation of a highly perturbed surface region for doses higher than a critical value of about 10 15 Sb + cm −2 .