Growth of AlGaInP in a high-speed rotating disk OMVPE reactor

In an OMVPE reactor with a high speed rotating disk, growth of a quaternary material AIGalnP is carried out after a basic investigation on the GaAs growth rate uniformity. Experimental growth rate and growth efficiency results are compared with the theoretical results obtained from an infinite diameter rotating disk model. Distributions of the lattice mismatch, PL spectra and carrier concentration were measured to clarify the disk rotation effect on these properties. The main reason for non-uniformities is not the disk rotation but the temperature distribution on a substrate carrier.