Skin Layer Defects in Si by Optimized Treatment in Hydrogen RF Plasma

The first step of the smart-cut™ process consists in inducing structural defects below the free surface of a silicon wafer, usually by implantation of light elements, such as hydrogen or helium. An alternative way to induce subsurface defects is by plasma treatment. In this work, we present a morphological and structural study on silicon wafers submitted to hydrogen plasma treatment, using two plasma-processing geometries. The parameters of the plasma treatment have been varied in order to limit the surface roughness and to confine the induced defects in a narrow region (50 nm) below the wafer surface. The morphological and structural investigations have been performed by AFM and TEM.