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Effects of $UV/O_3$ and SC-1 Step in the HF Last Silicon Wafer Cleaning on the Properties of Gate Oxide
Effects of $UV/O_3$ and SC-1 Step in the HF Last Silicon Wafer Cleaning on the Properties of Gate Oxide
1996
Hyeong-Bok Choe
Geun-Geol Ryu
Sang-Don Jeong
Hyeong-Tak Jeon
Keywords:
Materials science
Composite material
Metallurgy
Gate oxide
Wafer
Correction
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