Evidence of hole filling or hybridization in Y1−xPrxBa2Cu3O7−δ and Nd1>−xCexBa2Cu3O7−δ thin films

Abstract The electrical resistivities of thin films of Y 1−x Pr x Ba 2 Cu 3 O 7−δ and Nd 1−x Ce x Ba 2 Cu 3 O 7−δ have been measured as a function of temperature, magnetic field and concentration x . The ρ ( T , x ) behavior of the metastable Ce-doped samples closely follows that of the Pr-doped compounds, suggesting that the depression of T c is due to a common mechanism and that hole filling rather than magnetic pair breaking may be the dominant mechanism. This argument is supported by measurements of the upper critical field H c 2 for the Pr-doped system.