Performance Enhancement of Solid State Light Emission Device and Geometrically Confinement of Lighting Dots by Using Patterned Wafer Approaches

High-k material based Solid state incandescent light emitting devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light-emission devices. The light emission mechanism of this device is related to the thermal excitation of Si-diffusion assisted conductive filaments (CFs). In this work, we demonstrate an approach to improve the performance of HfO2 based SSI-LED devices, which uses a patterned wafer to enhance the electrical field locally and thus helps to form more CFs. Moreover, the distribution of the lighting dots can be regulated by the structure patterned on substrate with a special size and shape. Our results open an effective way to feasibly control the layout of lighting dots and optimize the performance of SSI-LEDs.