Old Web
English
Sign In
Acemap
>
Paper
>
AlGaN/GaN MIS-HEMTs using 4-nm-thick Al 2 O 3 Dielectric Deposited by Mist Chemical Vapor Deposition
AlGaN/GaN MIS-HEMTs using 4-nm-thick Al 2 O 3 Dielectric Deposited by Mist Chemical Vapor Deposition
2020
RuiShan Low
Shinsaku Kawabata
Joel T. Asubar
Hirokuni Tokuda
Masaaki Kuzuhara
Zenji Yatabe
Kenta Naito
Kazuki Nishimura
Yusui Nakamura
Keywords:
Optoelectronics
Materials science
Chemical vapor deposition
Mist
Dielectric
algan gan
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]