Zeeman Effect of the Carbon Acceptor in GaAs, II

The Zeeman splitting of shallow acceptors in semiconductors with degenerate bands has been studied experimentally as well as theoretically for more than two decades [1][2]. Two years ago we reported [2] on our examination of the ground state (1S 3/2Г8) and the first excited state (2P 3/2Г8) of the carbon acceptor in bulk GaAs. We have continued our work by investigating the splitting of the D-line (2P 5/2Г8 →1S 3/2Г8) applying a standard FIR-Fourier spectrometer. We have used the same sample as before, that is a LEC grown crystal which shows a persistent hole concentration (p = 9 · 1015 cm −3) after bleaching the EL2 absorption.