Dynamic stressing effects on reliability of strontium titanate (SrTiO/sub 3/) thin film capacitors for high-density memory applications

High dielectric constant SrTiO/sub 3/ films (/spl epsiv/=237 or C=70 fF//spl mu/m/sup 2/ measured at 100 kHz) have been fabricated and the dynamic stressing characteristics of these dielectrics has been studied for the first time. Time-dependent dielectric breakdown (TDDB) of SrTiO/sub 3/ is shown to be strongly dependent on frequency and duty cycle under dynamic stressing. On the other hand, dielectric dispersion does not exhibit significant dependence on pulse width or on-time of the stressing signal.