Research on the reliability of junctionless MOSFETs based inverter by 3D TCAD simulation

This paper investigates the reliability of junctionless MOSFETs based inverter by 3D TCAD simulation. The results show the I–V behavior of junctionless SOI-MOSFETs is highly resistant to accumulated fixed charge in oxide. Then the performance of junctionless device-based inverter is discussed. VM of juncitonless device-based inverter maintains within 0.05V and the transient response time shows very limited change when the surface density of interface fixed positive charge reaches 8*1011 cm−2. These results show great potential of junctionless MOSFET based invertors in high reliability digital application.