Strong and Tunable Spin−Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires

We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of strong spin−orbit coupling. The temperature and back gate dependences of phase coherence length, spin−orbit relaxation time, and background conductance were studied. Specifically, we show that the spin−orbit coupling strength can be modulated by more than five folds with an external electric field. These results suggest the Ge/Si nanowire system possesses strong and tunable spin−orbit interactions and may serve as a candidate for spintronics applications.