GeSi Nanocrystals in SiO 2 Matrix with Extended Photoresponse in Near Infrared
2018
The films of SiGe nanocrystals in SiO 2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO 2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.
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