The origins of the performance degradation of implanted p/sup +/ polysilicon gated p-channel MOSFET with/without rapid thermal annealing

Some anomalous behaviors, such as punchthrough voltage reduction, leakage current increase, and transconductance (g/sub m/) instability have been found in BF/sub 2/ implanted p/sup +/-polysilicon P-MOSFET's. These effects are supposed to be due to B-ion penetration. To prevent the B-ion penetration, RTA has been used. Experimental results show that RTA can improve the effect, however, the RTA process can also cause the generation of interface states, gate-induced-drain-leakage increase, and oxide quality degradation. All of the mechanisms of performance degradation are investigated and modeled in detail. >