LED epitaxial wafer growing on La0.3Sr1.7AlTaO6 substrate and manufacturing method of epitaxial wafer

The invention discloses an LED epitaxial wafer growing on a La0.3Sr1.7AlTaO6 substrate. The LED epitaxial wafer comprises a GaN buffer layer growing on the La0.3Sr1.7AlTaO6 substrate, an undoped GaN layer growing on the GaN buffer layer, an n-type GaN film growing on the undoped GaN layer, an InGaN/GaN multiple quantum well growing on the n-type GaN film and a p-type doped GaN film growing on the InGaN/GaN multiple quantum well. The invention further discloses a manufacturing method of the LED epitaxial wafer growing on the La0.3Sr1.7AlTaO6 substrate. The LED epitaxial wafer growing on the La0.3Sr1.7AlTaO6 substrate and the manufacturing method of the epitaxial wafer have the advantages of simple growing process and low manufacturing cost. Besides, the LED epitaxial wafer has low defect density and good crystallization quality, electrical and optical properties.