The effects of gamma irradiation on electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure

In this research, we have investigated the electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure before and after 60Co gamma (γ)-ray source irradiation with the total dose range of 0-500 kGy at room temperature. Electrical measurements of this structure have been performed using current–voltage (I–V) and capacitance-voltage (C–V) techniques. Experimental results show that the values of the ideality factor obtained from I–V measurements increased and the values of the barrier height obtained from reverse-bias C–V measurements decreased after gamma-irradiation. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.