A three terminal InP/InGaAsP optoelectronic thyristor

A three terminal light emitting opto-thyristor based on InP/InGaAsP heterostructures grown by liquid phase epitaxy (LPE) has been demonstrated. The opto-thyristor essentially combines the conventional PNPN thyristor and the NpN double heterostructure laser structure into a single PNpN device. Current-voltage characteristics confirm the thyristor type switching action with a maximum gate controllable breakover voltage of 8 V. Substantially increased light output at wavelengths of 1.3 and 0.93 /spl mu/m is observed upon switching. The optical output as a function of device voltage is also reported. >