Three-Dimensional Chip Stack With Integrated Decoupling Capacitors and Thru-Si Via Interconnects

In this letter, the integration of CMOS-compatible thru-Si via (TSV) interconnects with deep-trench decoupling capacitors is demonstrated. Reliability test is performed with a 65-nm CMOS test chip on top of a 3-D Si interposer chip that contains 10 000 TSV interconnects. Multilayer stacking is also demonstrated, and capacitance density of 280 nF/mm 2 is achieved with two-layer Si interposer chip stacks.