A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Kwang-Jin Lee,Beak-Hyung Cho,Woo-Yeong Cho,Sang-beom Kang,Byung-Gil Choi,Hyung-Rok Oh,Chang Soo Lee,Hye-jin Kim,Joon-Min Park,Qi Wang,Mu-Hui Park,Yu-Hwan Ro,Joon-Yong Choi,Ki-Sung Kim,Young-Ran Kim,In-Cheol Shin,Ki-won Lim,Ho-keun Cho,Chang-han Choi,Won-ryul Chung,Du-Eung Kim,Kwang-Suk Yu,Gi-Tae Jeong,Hong Sik Jeong,Choong-keun Kwak,Chang-Hyun Kim,Kinam Kim

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

2007

A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described. Through these schemes, the PRAM achieves read throughput of 266MB/S and maximum write throughput of 4.64MB/S with a 1.8V supply.

Keywords:

Computer science
Electronic engineering
CMOS
Charge pump
Parallel computing
Diode
Throughput
Computer hardware
Electrical engineering

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