100 Gbps (4 × 25 Gbps) Optical Receiver Module Packaged in Chip-on-Board Based on Germanium Photodetector

Abstract 100 Gbps (4 × 25 Gbps) optical receiver (Rx) module is demonstrated using Germanium (Ge) photodetector (PD) which is fabricated through Silicon-photonics process using 750 ohm-cm of high-resistivity silicon oxide insulator (SOI) wafer. Trans-impedance amplifier (TIA) and Ge PD are packaged with chip-on-board (COB) manner on a printed circuit board (PCB). High speed PCB for the assembly of both electronic and photonic devices in COB package is precisely designed from the material selection to the device footprint layout and transmission line design. The layout on PCB is optimized using high frequency simulation tool of HFSS to minimize RF loss happening in the transmission line and electrical interconnection points of bond wires. Electrical-optical (EO) S-parameter measurement for the Ge PD shows 22 GHz of transmittance (S21) 3dB bandwidth. Photocurrents of the photodetector induced by the optical input power are analyzed for signal integrity both TIA ON and OFF states. Photocurrent changes by the misalignment of the lensed optical fiber coupled to the edge coupler of the Ge PD shows that 3dB misalignment tolerances are 5.5 µm in the longitudinal and around +/-1 µm in the lateral directions. This COB packaging technique of optical Rx module can be applied for the integration and assembly of the optical module of higher data rate of 100 Gbps and beyond.