Hydrogen and deuterium profile in homoepitaxially grown CVD diamonds by ERDA method

Abstract Elastic recoil detection analysis (ERDA) was performed to determine H and D concentration profiles near the (100) surfaces of epitaxially grown diamond films. The other elements were analyzed by Rutherford backscattering spectrometry (RBS) at the same time. Microwave plasma chemical vapor deposition (CVD) was used for the growth. After the growth, the specimens were treated with H 2 , H 2 O 2 , D 2 or D 2 O 2 plasma. The areal densities of H determined by ERDA ranged from 3 to 4 × 10 15 atoms/cm 2 near the surface of all specimens. Deuterium densities of the samples treated with D 2 or D 2 O 2 plasma ranged from 1 to 2 × 10 15 atoms/cm 2 . These areal densities were two to three times larger than that of C atoms on the ideal (100) surface of diamond (∼ 1.6 × 10 15 atoms/cm 2 ).