Uniaxial-stress-induced alignment of the B804 (J-lines) centres in silicon
1998
Abstract The influence of uniaxial stress on the formation process of the trigonal B 80 4 centres in silicon was investigated with excitonic spectroscopy. Alignment along the [1 1 1] axis of about 70% of the centres has been obtained with application of uniaxial stress during defect formation.
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