GaAs-based near-infrared up-conversion device fabricated by wafer fusion

Reported for the first time is a full GaAs-based room-temperature near infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6 μm were up-converted to 0.87 μm.