Low Temperature Bonding of GaN and Carbon Composite via Au Capping Layer Activated by Ar Fast Atom Bombardment

Bonding of GaN to highly thermal conductive materials such as carbon composite (CC) are expected to address the thermal management challenges in the high-power devices. The bonding interface is required to have low heat resistance. In order to avoid adapting the damage to the GaN device by high temperature bonding process, we propose the bonding of GaN to CC via thin Au layers based on the surface activation bonding technique. The Au layers deposited on GaN and CC are successfully bonded at low temperature of 150°C in air after the surface treatment using Ar ion beam irradiation.