RMPECVD of silica films in large scale microwave plasma reactor : Films properties

Previous works have described the deposition conditions of silicon oxide by Remote Microwave Plasma Enhanced Chemical Vapor Deposition. In this paper, the size of the quartz tube containing the glow discharge has been changed (O=255 mm instead of 30 mm) and the process parameters (microwave power, pressure, temperature) are correlated with physico-chemical properties of the films. The comparison of the results for the two configurations allows to discuss the influence of the scale of the microwave plasma. The coatings are characterized in terms of density, chemical etch rate, bonding characteristics (FTIR), stoechiometry (NRA) and the microstructures revealed by AFM.