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Formation of High-Oriented Epitaxial Ni(Si0.8Ge0.2) on Strained Si0.8Ge0.2/Si(100) via Adding a Thin Ti Interlayer
Formation of High-Oriented Epitaxial Ni(Si0.8Ge0.2) on Strained Si0.8Ge0.2/Si(100) via Adding a Thin Ti Interlayer
2014
C. Hou
Y Ping
Bo Zhang
W Yu
Z. Xue
X. Wei
H. Gao
W Peng
Z. Di
M Zhang
Keywords:
Epitaxy
Inorganic chemistry
Materials science
Optoelectronics
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