GaN transistor-based Class E power amplifier for the low L-band

A GaN HEMT-based Class E power amplifier to work in the low L-band has been designed, built and measured. Measurements exhibit a 74% Power Added Efficiency and a 15W output power performance. The prototype has been tested under continuous wave excitation, two tone input signal and a constant envelope modulated signal used for the E5 band (1.19 GHz) of the future Galileo navigation system.